SPB21N10 G

SPI21N10 SPP21N10,SPB21N10 G SIPMOS Power-Transistor Product Summary Feature
N-Channel, Enhancement mode
175°C operating temperature
Avalanche rated 100 VDS
Pb-free, RoHS compliant PG-TO262-3-1 V R DS(on) 80 m
ID 21 A PG-TO263-3-2 PG-TO220-3-1
dv/dt rated Type SPP21N10 Package PG-TO220-3-1 Marking SPB21N10 PG-TO263-3-2 21N10 SPI21N10 PG-TO262-3-1 21N10 21N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 21 TC=100°C 15.0 ID puls 84 EAS 130 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 90 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =21 A , VDD =25V, RGS =25
Reverse diode dv/dt mJ kV/µs IS =21A, VDS =80V, di/dt=200A/µs, Tjmax =175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev 2.2 55/175/56 Page 1 2006-11-14 SPI21N10 SPP21N10,SPB21N10 G Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.7 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm 2 cooling area F) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID = 44 µA Zero gate voltage drain current µA IDSS VDS =100V, VGS=0V, Tj =25°C - 0.01 1 VDS =100V, VGS=0V, Tj =125°C - 1 100 IGSS - 1 100 nA RDS(on) - 65 80 m
Gate-source leakage current VGS =20V, VDS =0V Drain-source on-state resistance VGS =10V, ID =15.0A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.2 Page 2 2006-11-14 SPI21N10 SPP21N10,SPB21N10 G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 6.5 12.4 - S pF Dynamic Characteristics Transconductance gfs VDS
2*ID*RDS(on)max , ID =15.0A Input capacitance Ciss VGS =0V, VDS=25V, - 650 865 Output capacitance Coss f=1MHz - 140 186 Reverse transfer capacitance Crss - 80 120 Turn-on delay time td(on) VDD =50V, VGS =10V, - 10 15 Rise time tr ID =21A, RG =13 - 56 84 Turn-off delay time td(off) - 37 55 Fall time tf - 23 35 - 3.9 5.2 - 15.5 23.3 - 28.9 38.4 V(plateau) VDD =80V, ID=21A - 6.2 - V IS - - 21 A - - 84 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =21A VDD =80V, ID =21A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =21A - 0.94 1.25 V Reverse recovery time trr VR =50V, IF =lS , - 65 81.5 ns Reverse recovery charge Qrr diF /dt=100A/µs - 153 192 nC Rev 2.2 Page 3 2006-11-14 SPI21N10 SPP21N10,SPB21N10 G 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS
10 V 100 SPP21N10 24 SPP21N10 A W 20 80 18 16 ID Ptot 70 60 14 50 12 40 10 8 30 6 20 4 10 2 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C 10 2 SPP21N10 parameter : D = tp /T 10 1 tp = 6.8µs SPP21N10 K/W 10 µs A 10 0 DS (on ) ID =V DS 10 1 Z thJC /I D 100 µs 10 -1 R 1 ms D = 0.50 10 ms 10 10 -2 0.20 0 0.10 DC 0.05 10 -3 0.02 single pulse 0.01 10 -1 -1 10 10 0 10 1 10 2 V 10 3 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Rev 2.2 10 -4 -7 10 Page 4 2006-11-14 SPI21N10 SPP21N10,SPB21N10 G 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 50 e 260 m
d VGS[V]= a= 5.6 b= 6.0 c= 7.0 d= 8.0 e= 10.0 220 200 RDS(on) A c ID d c b a 30 180 160 140 120 20 100 b e 80 a 60 10 VGS[V]= a= 5.6 b= 6.0 40 20 0 0 5 10 0 0 20 V 5 10 15 c= 7.0 d= 8.0 e= 10.0 20 25 30 35 40 A 50 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS
2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 30 14 S A 12 11 10 ID g fs 20 9 8 15 7 6 5 10 4 3 5 2 1 0 2 3 4 5 6 0 0 8 V 8 12 16 24 A ID VGS Rev 2.2 4 Page 5 2006-11-14 SPI21N10 SPP21N10,SPB21N10 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 15.0 A, VGS = 10 V parameter: VGS = VDS SPP21N10 340 4 m
V VGS(th) RDS(on) 280 240 200 ID =0.25mA 3 160 2.5 120 98% 80 typ 2 ID =44µA 40 0 -60 -20 20 60 100 140 °C 1.5 -65 200 -35 -5 25 55 85 115 Tj °C 175 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 pF SPP21N10 A Ciss 10 1 C IF 10 3 Coss 10 2 10 0 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Rev 2.2 10 -1 0 Page 6 2006-11-14 SPI21N10 SPP21N10,SPB21N10 G 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 21 A , VDD = 25 V, RGS = 25  parameter: ID = 21 A pulsed 16 140 SPP21N10 mJ V 120 110 12 VGS EAS 100 90 0,2 VDS max 10 0,8 VDS max 80 8 70 60 6 50 40 4 30 20 2 10 0 25 45 65 85 105 125 145 °C 185 0 0 5 10 15 20 25 30 35 40 nC 50 QGate Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP21N10 120 V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Rev 2.2 Page 7 2006-11-14 SPI21N10 SPP21N10,SPB21N10 G Published by Infineon Technologies AG, D-81726 München, Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 Page 8 2006-11-14